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irsm836 - 0 44 ma 1 www.irf.com ? 20 12 international rectifier january 2 1 , 2013 4a, 250v integrated power module for small appliance motor drive applications description irsm836 - 044ma is a 4a, 250v integrated power module (ipm) designed for advanced appliance motor drive applications such as energy efficient fans and pumps. ir's technology offers an extremely compact, high performance ac motor - driver in an isolated package . this advanced ipm offers a combination of ir's low r ds(on) trench mosfet technology and the industry benchmark 3 - phase high voltage, rugged driver in a small pqfn package. at only 12x12mm and featuring integrated bootstrap functionality, the compact foot print of this surface - mount package makes it suitable for applications that are space - constrained. integrated over - current protection, fault reporting and under - voltage lockout functions deliver a high level of protection and fail - safe operation. irsm836 - 0 44ma functions without a heat sink. features ? integrated gate drivers and bootstrap functionality ? open - source for leg - shunt current sensing ? protection shutdown pin ? low r ds(on) trench mosfet ? under - voltage lockout for all channels ? matched propagation delay for all channels ? optimized dv/dt for loss and emi trade offs ? 3.3v schmitt - triggered active high input logic ? cross - conduction prevention logic ? motor power range up to ~150w, without heat sink ? isolation 1500vrms min base part number package type standard pack orderable part number form quantity irsm836 - 044ma 36l pqfn 12 x 12 mm tape and reel 2000 irsm836 - 044matr tray 800 irsm836 - 044ma all part numbers are pbf irsm836 - 0 44 ma
irsm836 - 044ma 2 www.irf.com ? 20 12 international rectifier january 2 1 , 2013 internal electrical schematic absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. these are not tested at manufacturing. all voltage parameters are absolute voltages referenced to vss u nless otherwise stated in the table. symbol description min max unit bv dss mosfet blocking voltage --- 250 v i o @ t=25c dc output current per mosfet --- 4 a i op pulsed output current (note 1) --- 16 p d @ t c =25c maximum power dissipation per mosfet --- 22 w v iso isolation voltage (1min) (note 2) --- 1500 v rms t j operating junction temperature - 40 150 c t l lead temperature (soldering, 30 seconds) --- 260 c t s storage temperature - 40 150 c v s1,2,3 high side floating supply offset voltage v b1,2,3 - 20 v b1,2,3 +0.3 v v b1,2,3 high side floating supply voltage - 0.3 250 v v cc low side and logic supply voltage - 0.3 20 v v in input voltage of lin, hin, i trip , en, rcin, flt v ss - 0.3 v cc +0.3 v note 1: pulse width = 100s, tc =25c, duty=1%. note 2: characterized, not tested at manufacturing i r s m 8 3 6 - 0 4 4 m a 6 0 0 v 3 - p h a s e d r i v e r h v i c v c c h i n 1 h i n 2 h i n 3 l i n 1 l i n 2 l i n 3 f a u l t i t r i p e n v b 1 v b 2 v b 3 v + v s s u , v s 1 v , v s 2 w , v s 3 r c i n v r u c o m v r v v r w
irsm836 - 044ma 3 www.irf.com ? 20 12 international rectifier january 21, 2013 recommended operating conditions symbol description min max unit v + positive dc bus input voltage --- 20 0 v v s1,2,3 high s ide floating s upply offset v oltage ( note 3) 20 0 v v b1,2,3 high side f loating supply v oltage v s +12 v s +20 v v cc low side and l ogic s upply v oltage 1 3.5 16.5 v v in input v oltage of lin, hin, i t rip , en, flt 0 5 v f p pwm carrier frequency --- 2 0 khz the input/output logic diagram is shown in figure 1. for proper operation the module should be used within the recommended conditions. all voltages are absolute referenced to com. the v s offset is tested with all supplies biased at 15v differential . note 3 : logic operational for v s from com - 5v to com+ 250 v. logic state held for v s from com - 5v to com - v bs . static electrical characteristics (v cc - com) = (v b - v s ) = 15 v. t a = 25 o c unless otherwise specified. the v in and i in parameters are referenced to v ss and are applicable to all six channels. the v ccuv parameters are referenced to v ss . the v bsuv parameters are referenced to v s . symbol description min typ max units conditions bv dss drain - to - source breakdown voltage 250 --- --- v t j =25c , i lk =250 a i lkh leakage current of high side fets in parallel 10 a t j =25c , v ds =250v i lkl leakage current of low side fets in parallel plus gate drive ic 15 a t j =25c , v ds =250v r ds(on) drain to source on resistance --- 0.74 1.04 t j =25c, v cc =15 v , i d =2a v in,th+ positive g oing i nput t hreshold 2.5 --- --- v v in,th - negative g oing input t hreshold --- --- 0.8 v v ccuv+, v bsuv+ v cc and v bs s upply u nder - v oltage, positive going t hreshold 8 8.9 9.8 v v ccuv - , v bsuv - v cc and v bs supply u nder - v oltage, negative going t hreshold 7.4 8.2 9 v v ccuvh, v bsuvh v cc and v bs s upply u nder - v oltage l ock - o ut h ysteresis --- 0.7 --- v i qbs quiescent v bs s upply c urrent v in =0v --- --- 125 a i qcc quiescent v cc s upply c urrent v in =0v --- --- 3.35 ma i in+ input b ias c urrent v in = 4 v --- 100 160 a i in - input bias c urrent v in =0v --- -- 1 a i trip+ i trip b ias c urrent v itrip = 4 v --- 5 40 a i trip - i trip b ias c urrent v itrip =0v --- -- 1 a v it, th+ i trip t hreshold voltage 0.37 0.46 0.55 v v it, th - i trip t hreshold voltage --- 0.4 --- v v it, hys i trip input hysteresis --- 0. 06 --- v
irsm836 - 044ma 4 www.irf.com ? 20 12 international rectifier january 21, 2013 r br internal bootstrap e quivalent resistor value --- 200 --- j =25c v rcin,th rcin p ositive g oing t hreshold --- 8 --- v r on,fault fault open - drain r esistance --- 50 100 note 4: characterized, not tested at manufacturing dynamic electrical characteristics (v cc - com) = (v b - v s ) = 15 v. t a = 25 o c unless otherwise specified. symbol description min typ max units conditions t on input to output p ropagation t urn - o n d elay t ime --- 0.7 1.5 s i d =1 m a, v + =50v see f ig. 2 t off input to output propagation turn - off delay t ime --- 0.7 1.5 s t f il,in input filter time (hin, lin) 2 00 330 --- ns v in =0 & v in = 4 v t f il,en input filter time ( en ) 100 200 --- ns v in =0 & v in = 4 v t blt - itrip i trip blanking time 100 330 ns v in =0 & v in =4v, v i/trip =5v t f au lt itrip to fault --- 600 1000 ns v in =0 & v in = 4 v t en en falling to s witch t urn - o ff 700 1000 ns v in =0 & v in = 4 v t itrip i trip to switch turn - off p ropagation d elay --- 950 1300 ns i d =1a, v + =50v , s ee f ig. 3 mosfet avalanche c haracteristics symbol description min typ max units conditions e as single pulse avalanche energy --- 47 --- mj t j =25c, l= 3m h, vdd= 100v, i as = 5.7 a , vgs=20v, so - 8 package thermal and mechanical characteristics symbol description min typ max units conditions r th(j - c t ) total thermal r esistance junction to case top --- 23.6 --- c/w one device r th(j - c b ) total thermal r esistance junction to case bottom --- 3.7 --- c/w one device
irsm836 - 044ma 5 www.irf.com ? 20 12 international rectifier january 21, 2013 qualification information ? qualification level industrial ?? moisture sensitivity level msl3 ??? esd machine model class b (per jedec standard jesd22 - a115 ) human body model class 2 (per standard esda/jedec js - 001 - 2012 ) rohs compliant yes ? qualification standards can be found at international rectifiers web site ?? ???
irsm836 - 044ma 6 www.irf.com ? 20 12 international rectifier january 21, 2013 input/output pin equivalent circuit diagrams esd diode esd diode v cc hin , lin , or en v ss 33k 20 v clamp esd diode esd diode v cc itrip v ss 1m e s d d i o d e e s d d i o d e v b h o v s e s d d i o d e e s d d i o d e l o c o m 6 0 0 v 2 0 v c l a m p 2 5 v c l a m p v c c e s d d i o d e e s d d i o d e v c c r c i n o r f a u l t v s s
irsm836 - 044ma 7 www.irf.com ? 20 12 international rectifier january 21, 2013 input - output logic level table en itrip hin1,2,3 lin1,2,3 u,v,w 1 0 1 0 v+ 1 0 0 1 0 1 0 0 0 off 1 1 x x off 0 x x x off figure 1 : input/output logic diagram g a t e d r i v e r i c v + u , v , w l o h o h i n 1 , 2 , 3 l i n 1 , 2 , 3 i trip u , v , w lin 1 , 2 , 3 hin 1 , 2 , 3
irsm836 - 044ma 8 www.irf.com ? 20 12 international rectifier january 21, 2013 figure 2a : input to output propagation turn - on delay time. figure 2b : input to output propagation turn - off delay time. figure 2c : diode reverse recovery. figure 2 : switching parameter definitions 5 0 % h i n / l i n v d s i d h i n / l i n t o f f t f 1 0 % i d 5 0 % v c e v d s i d h i n / l i n t o n t r 5 0 % h i n / l i n 9 0 % i d 1 0 % i d 5 0 % v d s 9 0 % i d v d s i f h i n / l i n t r r i r r
irsm836 - 044ma 9 www.irf.com ? 20 12 international rectifier january 21, 2013 figure 3 : i trip timing waveform i trip lin 1 , 2 , 3 hin 1 , 2 , 3 t flt - clr 50 % 50 % u , v , w 50 % t itrip 50 %
irsm836 - 044ma 10 www.irf.com ? 20 12 international rectifier january 21, 2013 module pin - out description pin name description 1 hin3 logic input for high side gate driver - phase 3 2 lin1 logic input for low side gate driver - phase 1 3 lin2 logic input for low side gate driver - phase 2 4 lin3 logic input for low side gate driver - phase 3 5 /flt fault output pin 6 itrip over - current protection pin 7 en enable pin 8 rcin reset programming pin 9, 39 vss, com ground for gate drive ic and low side gate drive return 10, 11 ,30, 37 u, vs1 output 1, high side floating supply offset voltage 12, 13 vr1 phase 1 low side fet source 14, 15 vr2 phase 2 low side fet source 16, 17, 38 v, vs2 output 2, high side floating supply offset voltage 18, 19 w, vs3 output 3, high side floating supply offset voltage 20, 21 vr3 phase 3 low side fet source 22 - 29 v+ dc bus voltage positive 31 vb1 high side floating supply voltage 1 32 vb2 high side floating supply voltage 2 33 vb3 high side floating supply voltage 3 34 vcc 15v supply 35 hin1 logic input for high side gate driver - phase 1 36 hin2 logic input for high side gate driver - phase 2 b note pin s 37 and 38 are not required to be co nnected electrically on the pcb , so they may be omitted from the footprint all pins with the same name are internally connected . for example, pins 10, 11, 30 and 37 are internally connected. 3 6 3 5 3 4 3 3 3 2 3 1 3 0 2 9 2 8 2 1 2 0 1 7 1 6 1 1 1 9 8 7 6 5 4 3 t o p v i e w 2 2 7 1 0 1 9 1 8 3 7 3 8 3 9 1 2 1 3 1 4 1 5 2 3 2 2 2 5 2 4 2 6
irsm836 - 044ma 11 www.irf.com ? 20 12 international rectifier january 21, 2013 fault reporting and programmable fault clear timer the irsm836 - 044ma provides an integrated fault reporting output and an adjustable fault clear timer. there are two situations that would cause the irsm836 - 044ma to report a fault via the fault pin. the first is an under - volt age condition of v cc and the second is when the itrip pin recognizes a fault. once the fault condition occurs, the fault pin is internally pulled to v ss and the fault clear timer is activated. the fault output stays in the low state until the fault condi tion has been removed and the fault clear timer expires; once the fault clear timer expires, the voltage on the fault pin will return to v cc . the length of the fault clear time period (t fltclr ) is determined by exponential charging characteristics of the capacitor where the time constant is set by r rcin and c rcin . in figure 4 where we see that a fault condition has occurred (uvlo or itrip), rcin and fault are pulled to v ss , and once the fault has been removed, the fault clear timer begins. figure 5 show s that r rcin is connected between the v cc and the rcin pin, while c rcin is placed between the rcin and v ss pins. figure 4 : rcin and fault pin waveforms figure 5 : programming the fault clear timer the design guidelines for this network are shown in table 1 . c rcin 1 nf ceramic r rcin 0.5 m to 2 m >> r on,rcin table 1 : design guidelines the length of the fault clear time period can be determined by using the formula below. v cc hin ( x 3 ) rcin en itrip v ss fault vrx lin ( x 3 ) v b ( x 3 ) v s ( x 3 ) irsm836 - 044ma i - r rcin c rcin ? ? ? ? ? ? ? ? ? ? ? ? ? cc th rcin rcin rcin fltclr v v c r t , 1 ln v c c v r c i n t i m e v r c i n , t h t f l t c l r v s s v f a u l t t i m e v s s i t r i p h i g h i m p e d a n c e s t a t e
irsm836 - 044ma 12 www.irf.com ? 20 12 international rectifier january 21, 2013 typical application connection irsm836 - 044ma 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. in order to provide good decoupling between vcc - vss and vb1,2,3 - vs1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. additional high frequency capacitors, typically 0.1f, are recommended. 3. value of the boot - strap capacitors depends upon t he switching frequency. their selection should be made based on ir application note an - 1044. 4. pwm generator must be disabled within fault duration to guarantee shutdown of the system. over - current condition must be cleared before resuming operation. i r s m 8 3 6 - 0 4 4 m a h v i c v c c h i n 1 h i n 2 h i n 3 l i n 1 l i n 2 l i n 3 f a u l t i t r i p e n v b 1 v b 2 v b 3 u , v s 1 v , v s 2 w , v s 3 r c i n p o w e r s u p p l y p w m w h p w m v h p w m u h p w m v l p w m w l g a t e k i l l a i n 1 i f b + i f b - i f b o v s s v d d v d d c a p x t a l 0 x t a l 1 a i n 2 s p d - r e f v s s c o m v b u s i r m c k 1 7 1 p w m u l 4 . 8 7 k 2 m 2 m 1 n f 0 . 5 6 . 0 4 k 6 . 0 4 k 7 . 6 8 k
irsm836 - 044ma 13 www.irf.com ? 20 12 international rectifier january 21, 2013 current capability in a t ypical application figure 6 shows the current capability for this module at specified conditions. the current capability of the module is affected by application conditions including the pcb layout, ambient temperature, maxi mum pcb temperature, modulation scheme, pcb copper thickness and so on. the curves below were obtained from measurements carried out on the irmcs1471_r4 reference design board which includes the irsm836 - 044ma and irs irmck171 digital control ic. figure 6 : maximum sinusoidal phase current vs. pwm switching frequency sinusoidal modulation, v + =150 v, pf=0.9 8 0 100 200 300 400 500 600 700 800 900 1000 6 8 10 12 14 16 18 20 rms current (ma) carrier frequency (khz) 150v, ?tca = 70 1oz, 3p 2oz, 3p 1oz, 2p 2oz, 2p 0 100 200 300 400 500 600 700 800 6 8 10 12 14 16 18 20 rms current (ma) carrier frequency (khz) 150v, ?tca = 40 1oz, 3p 2oz, 3p 1oz, 2p 2oz, 2p
irsm836 - 044ma 14 www.irf.com ? 20 12 international rectifier january 21, 2013 pcb example figure 7 below shows an example layout for the application pcb . the effective area of the v+ top - layer copper plane is ~ 3cm2 in this example. for an fr4 pcb with 1oz copper, r th(j - a) is about 40 c/w. a lower r th(j - a) can be achieved using thicker copper and/or additional layers . figure 7 : pcb layout example and corresponding thermal image (6khz, 2p, 2oz, ?tca=70c, v+ = 150v, iu = 870marms, po = 148w) at the modules typical operating conditions, dv/dt of the phase node voltage is influenced by the load capacitance which includes parasitic cap acitance of th e pcb, mosfet output capacitance and motor winding capacitance. to turn off the mosfet, the load capacitance needs to be charged by the phase current. for the irmcs1171 reference design, t urn - off d v /dt ranges from 2 to 5 v/ns depending on the phase current magnitude. turn - on d v /dt is influenced by pcb parasitic capacitance and motor winding capacitance and typically ranges from 4 to 6 v/ns. the mosfet turn - on loss combined with the complimentary bod y diode reverse recovery loss comprises the m ajority of the total switching losses. two - phase modulation can be used to reduce switching losses and run the module at higher phase currents . m odule
irsm836 - 044ma 15 www.irf.com ? 20 12 international rectifier january 21, 2013 36l package outline irsm836 - 044ma (bottom view) dimensions in mm
irsm836 - 044ma 16 www.irf.com ? 20 12 international rectifier january 21, 2013 36l package outline irsm836 - 044m a (bottom view) dimensions in mm
irsm836 - 044ma 17 www.irf.com ? 20 12 international rectifier january 21, 2013 36l package outline irsm836 - 044ma (top and side view)
irsm836 - 044ma 18 www.irf.com ? 20 12 international rectifier january 21, 2013 top marking
irsm836 - 044ma 19 www.irf.com ? 20 12 international rectifier january 21, 2013 revision history january 21 , 201 3 formatting corrections; added notes about what pins are internally connected . data and specifications are subject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252 - 7105 tac fax: (310) 252 - 7903 visit us at www.irf.com for sales contact information

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